Band Structure Measurements and Calculations of Epitaxially Grown GaN Based Photonic Crystal Slabs with Semipolar Quantum Wells
نویسنده
چکیده
We report on the large area realization of GaN photonic crystal slabs with semipolar InGaN quantum wells (QWs) using laser interference lithography and selective area metalorganic vapour phase epitaxy (MOVPE). Directional extraction of guided modes was observed in angle-resolved photoluminescence spectroscopy (ARPL), and the photonic crystal slab dispersion relation was measured. A comparison of the observed band structure to theory was made using the finite difference time domain method (FDTD).
منابع مشابه
True-Green Photonic Crystal LED Based on GaN Nanostripes
A bottom-up approach for photonic crystal emitters and LEDs with semipolar quantum wells on large foreign substrates is presented. Structured c-oriented GaN/AlGaN templates are overgrown with GaN nanostripes and semipolar QWs emitting in the true-green spectral region. After embedding, the stripes and the growth mask act as one-dimensional (1D) photonic crystal. Electroluminescence shows bright...
متن کاملEffects of strain on the band structure of group-III nitrides
We present a systematic study of strain effects on the electronic band structure of the group-IIInitrides (AlN, GaN and InN). The calculations are based on density functional theory (DFT) with band-gap-corrected approaches including hybrid functional and quasiparticle G0W0 methods. We study strain effects under realistic strain conditions, hydrostatic pressure and biaxial stress. The strain-ind...
متن کاملFormation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101 ̄1) semipolar GaN template
GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency Appl.
متن کاملRole of strain in polarization switching in semipolar InGaN/GaN quantum wells
The effect of strain on the valence-band structure of (1122) semipolar InGaN grown on GaN substrates is studied. A k·p analysis reveals that anisotropic strain in the c-plane and shear strain are crucial for deciding the ordering of the two topmost valence bands. The shear-strain deformation potential D6 is calculated for GaN and InN using density functional theory with the Heyd-ScuseriaErnzerh...
متن کاملMOVPE Growth of Semipolar GaN on Patterned Sapphire Wafers: Growth Optimisation and InGaN Quantum Wells
We are able to achieve two different GaN semipolar surfaces by growing on patterned sapphire substrates: (101̄1) GaN on (112̄3) sapphire and (112̄2) on (101̄2). By this approach, the growth of a coalesced semipolar layer on a large area of about two inches diameter is possible. Well known from the c-plane direction, an in-situ deposited SiN interlayer could reduce the defect density also in semipol...
متن کامل